An InGaP/InGaAs/GaAs double channel pseudomorphic high electron mobility transistor (DC-PHEMT)

Subscribe to email list

Please select the email list(s) to which you wish to subscribe.
CAPTCHA
This question is for testing whether or not you are a human visitor and to prevent automated spam submissions.
Image CAPTCHA

Enter the characters shown in the image.

User menu

You are here

  1. Department of Statistics
  2. An InGaP/InGaAs/GaAs double channel pseudomorphic high electron mobility transistor (DC-PHEMT)

An InGaP/InGaAs/GaAs double channel pseudomorphic high electron mobility transistor (DC-PHEMT)

TitleAn InGaP/InGaAs/GaAs double channel pseudomorphic high electron mobility transistor (DC-PHEMT)
Publication TypeConference Paper
Year of Publication2002
AuthorsChuang, HM, Lin, KW, Chen, CY, Chen, JY, Kao, CI, Liu, WC
Conference NameOptoelectronic and Microelectronic Materials and Devices, 2002 Conference on
PublisherIEEE